FCA36N60NF

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FCA36N60NF datasheet

• Маркировка
  FCA36N60NF
• Производитель
  Fairchild Semiconductor
• Описание
  Fairchild Semiconductor FCA36N60NF Continuous Drain Current: 34.9 A Current - Continuous Drain (id) @ 25?° C: 34.9A Drain To Source Voltage (vdss): 600V Drain-source Breakdown Voltage: 600 V Fall Time: 4 ns Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 39 S Gate Charge (qg) @ Vgs: 112nC @ 10V Gate Charge Qg: 86 nC Gate-source Breakdown Voltage: 30 V Input Capacitance (ciss) @ Vds: 4245pF @ 100V Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Power - Max: 312W Power Dissipation: 312 W Rds On (max) @ Id, Vgs: 95 mOhm @ 18A, 10V Resistance Drain-source Rds (on): 80 mOhms Rise Time: 17 ns Series: SupreMOS?®, FRFET?® Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 5V @ 250?µA RoHS: yes Drain-Source Breakdown Voltage: 600 V Gate-Source Breakdown Voltage: 30 V Resistance Drain-Source RDS (on): 80 mOhms Forward Transconductance gFS (Max / Min): 39 S Factory Pack Quantity: 30
• Количество страниц
  8 шт.
• Форматы файла
  HTML, PDF

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